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Wiley电子期刊(4)	SpringerLink电子期刊(2)	Elsevier电子期刊(14)
Springer电子图书(1)	NATURE电子期刊(2)	ACS电子期刊(15)

在“Elsevier电子期刊”中，命中：14条，耗时：0.0149919 秒

在所有数据库中总计命中：38条

1.Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors

作者：Tim Baldauf^a ; ^{Tim.Baldauf@namlab.com} ; André ; Heinzig^a ; Jens Trommer^b ; Thomas Mikolajick^a ; ^b ; Walter Michael Weber^a ; ^b

关键词：Silicon nanowire ; Reconfigurable logic ; CMOS ; RFET ; SBFET ; Tunneling ; Schottky junction ; Stress ; Strain ; Symmetry ; Deformation potential ; Self-limited oxidation ; Simulation ; TCAD

刊名：Solid-State Electronics

出版年：2017

2.Atomic layer deposited TiO_x/AlO_x nanolaminates as moisture barriers for organic devices

作者：Frederik Nehm^a ; ^{frederik.nehm@iapp.de" class="auth_mail" title="E-mail the corresponding author} ; Felix Dollinger^a ; Hannes Klumbies^a ; Lars Mü ; ller-Meskamp^a ; Karl Leo^a ; Aarti Singh^b ; Claudia Richter^b ; Uwe Schroeder^b ; Thomas Mikolajick^b ; Christoph Hossbach^c ; Matthias Albert^c ; Johann W. Bartha^c

关键词：Moisture barrier ; Nanolaminate ; OLEDs ; Atomic layer deposition ; AlOx/TiOx ; WVTR

刊名：Organic Electronics

出版年：2016

3.Novel approach for n-type doping of HVPE gallium nitride with germanium

作者：Patrick Hofmann^a ; ^{patrick.hofmann@namlab.com" class="auth_mail" title="E-mail the corresponding author} ; Martin Krupinski^a ; Frank Habel^b ; Gunnar Leibiger^b ; Berndt Weinert^b ; Stefan Eichler^b ; Thomas Mikolajick^a ; ^c

关键词：A3. Hydride vapor phase epitaxy ; A1. Doping ; A2. Single Crystal Growth ; B1. Gallium Compounds ; B1. Nitrides ; B2. Semiconducting III-V materials

刊名：Journal of Crystal Growth

出版年：2016

4.Conduction barrier offset engineering for DRAM capacitor scaling

作者：Milan Pe&scaron ; ić^a ; ^{Milan.Pesic@namlab.com" class="auth_mail" title="E-mail the corresponding author} ; Steve Knebel^a ; Kyuho Cho^b ; Changhwa Jung^b ; Jaewan Chang^b ; Hanjin Lim^b ; Nadiia Kolomiiets^c ; Valeri V. Afanas&rsquo ; ev^c ; Thomas Mikolajick^a ; ^d ; Uwe Schroeder^a

刊名：Solid State Electronics

出版年：2016

5.Ferroelectric phase transitions in nanoscale HfO₂ films enable giant pyroelectric energy conversion and highly efficient supercapacitors

作者：Michael Hoffmann^a ; ^{michael.hoffmann@namlab.com" class="auth_mail" title="E-mail the corresponding author}Author Vitae ; Uwe Schroeder^a ; ^{uwe.schroeder@namlab.com" class="auth_mail" title="E-mail the corresponding author}Author Vitae ; Christopher Kü ; nneth^b ; ^{kuenneth@hm.edu" class="auth_mail" title="E-mail the corresponding author}Author Vitae ; Alfred Kersch^b ; ^{akersch@hm.edu" class="auth_mail" title="E-mail the corresponding author}Author Vitae ; Sergej Starschich^c ; ^{starschich@iwe.rwth-aachen.de" class="auth_mail" title="E-mail the corresponding author}Author Vitae ; Ulrich Bö ; ttger^c ; ^{boettger@iwe.rwth-aachen.de" class="auth_mail" title="E-mail the corresponding author}Author Vitae ; Thomas Mikolajick^a ; ^d ; ^{thomas.mikolajick@namlab.com" class="auth_mail" title="E-mail the corresponding author}Author Vitae

关键词：Pyroelectric ; Ferroelectric ; Hafnium oxide ; Supercapacitor ; Electrocaloric effect ; Energy harvesting

刊名：Nano Energy

出版年：2015

6.Polycrystalline silicon gate originated CMOS device failure investigated by Scanning Spreading Resistance Microscopy

作者：Stefan Doering^a ; ^b ; ^{stefan.doering@infineon.com" class="auth_mail" title="E-mail the corresponding author} ; Andre Wachowiak^a ; Markus Rochel^b ; Christian Nowak^b ; Marko Hoffmann^b ; Uwe Winkler^b ; Mirco Richter^b ; Hagen Roetz^b ; Stefan Eckl^b ; Thomas Mikolajick^a ; ^c

关键词：Scanning Spreading Resistance Microscopy (SSRM) ; CMOS ; Failure analysis ; Gate depletion ; Polycrystalline silicon (poly-Si) ; Large poly-Si grain ; Blocked implant

刊名：Microelectronic Engineering

出版年：2015

7.Localization of temperature sensitive areas on analog circuits

作者：Christoph Eichenseer^a ; ^{christoph.eichenseer@infineon.com" class="auth_mail} ; Gerhard Pö ; ppel^a ; Thomas Mikolajick^b ; ^c

关键词：Failure analysis ; Heat diffusion ; Corner device ; Analog circuits

刊名：Microelectronics Journal

出版年：June 2014

8.Scanning Spreading Resistance Microscopy analysis of locally blocked implant sites

作者：Stefan Doering^a ; ^b ; ^{stefan.doering@infineon.com" class="auth_mail} ; Andre Wachowiak^a ; Uwe Winkler^b ; Matthias Richter^b ; Jens Goehler^b ; Hagen Roetz^b ; Stefan Eckl^b ; Thomas Mikolajick^a ; ^c

关键词：Scanning Spreading Resistance Microscopy (SSRM) ; Scanning probe microscopy (SPM) ; CMOS ; Polycrystalline silicon (poly-Si) ; Blocked implant

刊名：Microelectronic Engineering

出版年：25 June 2014

9.Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

作者：Ekaterina Yurchuk^a ; ^{ekaterina.yurchuk@namlab.com} ; Johannes Mü ; ller^b ; Steve Knebel^a ; Jonas Sundqvist^b ; Andrew P. Graham^a ; Thomas Melde^a ; Uwe Schrö ; der^a ; Thomas Mikolajick^a ; ^c

关键词：Ferroelectric HfO2 ; Si-doping ; Ferroelectric thin films ; Thickness dependence

刊名：Thin Solid Films

出版年：2013

10.Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO₂

作者：Dominik Martin ; Ekaterina Yurchuk ; Stefan M¨¹ller ; Johannes M¨¹ller ; Jan Paul ; Jonas Sundquist ; Stefan Slesazeck ; Till Schl?sser ; Ralf van Bentum ; Martin Trentzsch ; Uwe Schr?der ; Thomas Mikolajick

关键词：Non-volatile memory ; FeFET ; Scalability ; HfO2 ; Ferroelectricity

刊名：Solid-State Electronics

出版年：2013

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作者(14)

按出版年细分(14)

2027年及以后(2)

2017年(1)

2016年(3)

2015年(2)

2013年(2)

2011年(1)

2005年(1)

2003年(2)

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