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在“Elsevier电子期刊”中，命中：5,450条，耗时：0.0620025 秒

在所有数据库中总计命中：11,390条

1.The effects of degeneracy of the carrier ensemble on the energy loss rate and the high field mobility characteristics under the conditions of low lattice temperatures

作者：A. Basu ; B. Das ; T.R. Middya ; D.P. Bhattacharya ; ^{d_p_bhattacharya@rediffmail.com}

关键词：Semiconductors ; Non-linear transport ; Electron energy loss ; Mobility

刊名：Physica B: Condensed Matter

出版年：2017

2.In vitro monitoring of amyloid β-peptide oligomerization by Electrospray differential mobility analysis: An alternative tool to evaluate Alzheimer's disease drug candidates

作者：Dimitri Brinet^a ; ^b ; Franç ; ois Gaie-Levrel^c ; Vincent Delatour^c ; Julia Kaffy^a ; Sandrine Ongeri^a ; Myriam Taverna^b ; ^{myriam.taverna@u-psud.fr}

关键词：Aβ ; Amyloid-beta peptide ; AD ; Alzheimer's disease ; CE ; Capillary Electrophoresis ; ThT ; Thioflavin-T ; TEM ; Transmission Electron Microscopy ; DC ; drug candidate ; SEC ; Size Exclusion Chromatography ; FCS ; fluorescence correlation spectroscopy ; FFF ; field flow fractionation ; ES-DMA ; Electrospray differential mobility analysis ; DMAS or SMPS ; Differential Mobility Analyzing System ; WCPC ; Water Condensation Particle Counter

刊名：Talanta

出版年：2017

3.Gate leakage currents induced by thermal fluctuation on two-dimensional electron gas in AlGaN/GaN high-electron-mobility transistors

作者：Jian Peng^a ; Xiwen Liu^a ; Dong Ji^b ; Yanwu Lu^a ; ^{ywlu@bjtu.edu.cn}

关键词：Nitride semiconductor ; Heterostructure ; Two-dimensional electron gas ; Leakage current

刊名：Thin Solid Films

出版年：2017

4.Room temperature HEMT detector in 0.1-1 THz

作者：M. Alabaf ; H. Rasooli Saghai ; ^{h_rasooly_s@yahoo.com} ; ^{h_rasooli@iaut.ac.ir}

关键词：THz detection ; 0.1&ndash ; 1 ; Thz ranges ; Room temperature ; GaAs/AlGaAshetrostructure High Electron Mobility Transistor (HEMT)

刊名：Optik - International Journal for Light and Electron Optics

出版年：2017

5.Interdomain electron transfer in cellobiose dehydrogenase is governed by surface electrostatics

作者：Alan Kadek^a ; ^b ; Daniel Kavan^a ; ^b ; Julien Marcoux^c ; ^d ; ¹ ; Johann Stojko^c ; ^d ; Alfons K.G. Felice^e ; Sarah Cianfé ; rani^c ; ^d ; Roland Ludwig^e ; Petr Halada^a ; Petr Man^a ; ^b ; ^{pman@biomed.cas.cz}

关键词：CDH ; cellobiose dehydrogenase ; DH ; dehydrogenase (domain) ; CYT ; cytochrome (domain) ; HDX-MS ; hydrogen/deuterium exchange mass spectrometry ; IET ; interdomain electron transfer ; IM-MS ; ion mobility mass spectrometry

刊名：Biochimica et Biophysica Acta (BBA) - General Subjects

出版年：2017

6.A new defect chemistry model for Nb-doped SrCoO_2.5+δ: The role of oxygen interstitials and delocalized-to-localized electron holes

作者：Jie Wang ; Xinfang Jin ; Kevin Huang ; ^{huang46@cec.sc.edu}

关键词：Defect chemistry ; Oxygen interstitials ; Delocalized and localized holes ; Oxygen stoichiometry ; Hole mobility

刊名：Journal of Solid State Chemistry

出版年：2017

7.High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors

作者：Jong-Min Lee ; ^{leejongmin@etri.re.kr} ; Byoung-Gue Min ; Cheol-Won Ju ; Ho-Kyun Ahn ; Jong-Won Lim

关键词：AlGaN/GaN ; HEMT ; High temperature storage ; Reliability ; Gate contact

刊名：Current Applied Physics

出版年：2017

8.Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiO_x capping layer by sputtering and post-annealing

作者：Shyh-Jer Huang^a ; Cheng-Wei Chou^a ; ^{j2222222229@gmail.com} ; Yan-Kuin Su^a ; ^{yksu@mail.ncku.edu.tw} ; Jyun-Hao Lin^a ; Hsin-Chieh Yu^a ; De-Long Chen^a ; Jian-Long Ruan^b

关键词：HEMTs ; Gallium nitride ; Enhancement mode ; Sputter ; p-NiOx

刊名：Applied Surface Science

出版年：2017

9.Suppression of efficiency roll-off in highly efficient blue phosphorescent organic light-emitting devices using novel iridium phosphors with good electron mobility

作者：Zheng-Guang Wu^a ; You-Xuan Zheng^a ; ^{yxzheng@nju.edu.cn} ; Liang Zhou^b ; ; Yi Wang^a ; ; Yi Pan^a

关键词：Blue ; Organic light-emitting diode ; Iridium complex ; Efficiency ; Efficiency roll-off

刊名：Organic Electronics

出版年：2017

10.Analytical modeling of the lattice and thermo-elastic coefficient mismatch-induced stress into silicon nanowires horizontally embedded on insulator-on-silicon substrates

作者：Sulagna Chatterjee^a ; Sanatan Chattopadhyay^b ; ^{scelc@caluniv.ac.in}

关键词：Silicon-nanowire (Si-nanowire) ; Stress modeling ; Insulator-on-silicon substrate ; Electron mobility ; Hole mobility

刊名：Superlattices and Microstructures

出版年：2017

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