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在“SpringerLink电子期刊”中，命中：47条，耗时：小于0.01 秒

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1. Optical limiting in solutions of InP and GaAs nanowires and hybrid systems based on such nanocrystals

作者：V. V. Danilov (1) (2)
A. I. Khrebtov (1) (3)
A. S. Panfutova (1)
G. E. Cirlin (3) (4) (5)
A. D. Bouravleuv (3) (5) (6)
V. Dhaka (7)
H. Lipsanen (7)

1. Vavilov State Optical Institute ; St. Petersburg ; 199034 ; Russia
2. St. Petersburg State Transport University ; St. Petersburg ; 190031 ; Russia
3. St. Petersburg Academic University-Nanotechnology Research and Education Centre ; Russian Academy of Sciences ; St. Petersburg ; 194021 ; Russia
4. St. Petersburg State Polytechnic University ; St. Petersburg ; 195251 ; Russia
5. Institute for Analytical Instrumentation ; Russian Academy of Sciences ; St. Petersburg ; 198095 ; Russia
6. Ioffe Physical Technical Institute ; Russian Academy of Sciences ; St. Petersburg ; 194021 ; Russia
7. Department of Micro- and Nanosciences ; Micronova ; Aalto University ; P.O. Box 13500 ; 00076 ; Aalto ; Finland

刊名：Technical Physics Letters

出版年：2015

2. Determination of rare-earth elements in nitric acid solutions with high concentrations of uranium and macrocomponents

作者：Yu. A. Naumova (1)
N. V. Sapozhnikova (1)
O. N. Egorova (1)
A. A. Lumpov (1)

1. Khlopin Radium Institute ; 2-i Murinskii pr. 28 ; St. Petersburg ; 194021 ; Russia

关键词：rare ; earth elements ; multicomponent process solutions ; uranium ; optical emission spectroscopy

刊名：Journal of Analytical Chemistry

出版年：2015

3. Modeling of Threading Dislocation Density Reduction in Porous III-Nitride Layers

作者：Dmitry M. Artemiev (1)
Tatiana S. Orlova (1) (2)
Vladislav E. Bougrov (1)
Maxim A. Odnoblyudov (1)
Alexei E. Romanov (1) (2) (3)

1. ITMO University ; Kronverksky ; 49 ; 198205 ; Saint Petersburg ; Russia
2. A.F.Ioffe Physical Technical Institute ; Polytekhnicheskaya ; 26 ; 194021 ; Saint Petersburg ; Russia
3. Togliatti State University ; Belorusskaya ; 14 ; 445667 ; Togliatti ; Russia

关键词：Reaction ; kinetics model ; threading dislocations ; porous III ; nitride layers

刊名：Journal of Electronic Materials

出版年：2015

4. Manifestation of spin-dependent recombination in afterglow of zinc oxide crystals

作者：A. S. Gurin (1)
N. G. Romanov (1)
D. O. Tolmachev (1)
P. G. Baranov (1)

1. Ioffe Physical-Technical Institute ; Russian Academy of Sciences ; Politekhnicheskaya ul. 26 ; St. Petersburg ; 194021 ; Russia

刊名：Physics of the Solid State

出版年：2015

5. Nonequilibrium distribution function in the presence of a heat flux at the interface between two crystals

作者：A. P. Meilakhs (1)

1. Ioffe Physical-Technical Institute ; Russian Academy of Sciences ; Politekhnicheskaya ul. 26 ; St. Petersburg ; 194021 ; Russia

刊名：Physics of the Solid State

出版年：2015

6. On the electronic state of an atom adsorbed on epitaxial graphene formed on metallic and semiconductor substrates

作者：S. Yu. Davydov (1)
A. A. Lebedev (1)

1. Ioffe Physical-Technical Institute ; Russian Academy of Sciences ; Politekhnicheskaya ul. 26 ; St. Petersburg ; 194021 ; Russia

刊名：Physics of the Solid State

出版年：2015

7. Optical lattices of excitons in InGaN/GaN quantum well systems

作者：V. V. Chaldyshev (1)
A. S. Bolshakov (1)
E. E. Zavarin (1)
A. V. Sakharov (1)
V. V. Lundin (1)
A. F. Tsatsulnikov (1)
M. A. Yagovkina (1)

1. Ioffe Physical-Technical Institute ; Russian Academy of Sciences ; St. Petersburg ; 194021 ; Russia

刊名：Semiconductors

出版年：2015

8. Adaptation of the model of tunneling in a metal/CaF2/Si(111) system for use in industrial simulators of MIS devices

作者：M. I. Vexler (1)
Yu. Yu. Illarionov (1) (2)
S. E. Tyaginov (1) (2)
T. Grasser (2)

1. Ioffe Physical-Technical Institute ; Russian Academy of Sciences ; St. Petersburg ; 194021 ; Russia
2. TU Vienna ; Institute for Microelectronics ; Vienna ; 1040 ; Austria

刊名：Semiconductors

出版年：2015

9. Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping

作者：D. A. Firsov (1)
L. E. Vorobjev (1)
V. Yu. Panevin (1)
A. N. Sofronov (1)
R. M. Balagula (1)
I. S. Makhov (1)
D. V. Kozlov (2) (3)
A. P. Vasil鈥檈v (4)

1. St. Petersburg State Polytechnical University ; St. Petersburg ; 195251 ; Russia
2. Institute of Physics of Microstructures ; Russian Academy of Sciences ; Nizhni Novgorod ; 607680 ; Russia
3. Lobachevsky State University ; Nizhni Novgorod ; 603950 ; Russia
4. Ioffe Physical-Technical Institute ; Russian Academy of Sciences ; St. Petersburg ; 194021 ; Russia

刊名：Semiconductors

出版年：2015

10. Effect of a defect structure on the static and long-term strength of submicrocrystalline VT1-0 titanium fabricated by plastic deformation during screw and lengthwise rolling

作者：V. I. Betekhtin (1)
Yu. R. Kolobov (2) (3)
V. Sklenicka (4)
A. G. Kadomtsev (1)
M. V. Narykova (1)
J. Dvorak (4)
E. V. Golosov (3)
B. K. Kardashev (1)
I. N. Kuz鈥檓enko (2)

1. Ioffe Physical Technical Institute ; Russian Academy of Sciences ; Politekhnicheskaya ul. 26 ; St. Petersburg ; 194021 ; Russia
2. Scientific-Education Center 鈥淣anostructured Materials and Nanotechnologies ; 鈥? Belgorod State University ; ul. Koroleva 2a ; Belgorod ; 308034 ; Russia
3. Institute of Problems of Chemical Physics ; Russian Academy of Sciences ; pr. Akademika Semenova 1 ; Chernogolovka ; Moscow oblast ; 142432 ; Russia
4. Institute of Physics of Materials AS CR ; Brno ; Czech Republic

刊名：Technical Physics

出版年：2015

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