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在“Springer”中，命中：640条，耗时：0.1369412 秒

1.Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio

作者：Atsushi Nakadaira (1)
Hidenao Tanaka (1)

关键词：Key words GaAs ; High temperature growth ; Low ; pressure metalorganicvapor phase epitaxy ; Low V/III molar ratio ; Zinc ; blende GaN

刊名：Journal of Electronic Materials

出版时间：March 1997

出版年：1997

2.Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio

作者：Atsushi Nakadaira (1)
Hidenao Tanaka (1)

关键词：Key words GaAs ; High temperature growth ; Low ; pressure metalorganicvapor phase epitaxy ; Low V/III molar ratio ; Zinc ; blende GaN

刊名：Journal of Electronic Materials

出版时间：March 1997

出版年：1997

3.Low temperature growth of SWNTs on a nickel catalyst by thermal chemical vapor deposition

作者：Maoshuai He (1) maoshuai.he@hut.fi
Alexander I. Chernov (2)
Elena D. Obraztsova (2)
Jani Sainio (3)
Emma Rikkinen (1)
Hua Jiang (4)
Zhen Zhu (4)
Antti Kaskela (4)
Albert G. Nasibulin (4)
Esko I. Kauppinen (45) esko.kauppinen@hut.fi
Marita Niemel盲 (1)
Outi Krause (1)

关键词：Single ; walled carbon nanotubes – ; synthesis – ; low temperature – ; nickel catalyst

刊名：Nano Research

出版时间：April 2011

出版年：2011

4.Low-energy ion beam treatment of 伪-Al₂O₃(0001) and improvement of photoluminescence of ZnO thin films

作者：Jong-Young Park (1)
Young-Soo No (1)
Byung-Jun Park (1)
Hyun-Woo Lee (1)
Ji-Won Choi (1)
Jin-Sang Kim (1)
Y. Ermakov (1)
Seok-Jin Yoon (1)
Young-Jei Oh (1)
Won-Kook Choi (1) wkchoi@kist.re.kr

关键词：ZnO thin film ; low ; energy ion beam ; α ; Al2O3(0001) ; Al−N ; photoluminescence

刊名：Metals and Materials International

出版时间：July 2004

出版年：2004

5.Low-energy ion beam treatment of 伪-Al₂O₃(0001) and improvement of photoluminescence of ZnO thin films

作者：Jong-Young Park (1)
Young-Soo No (1)
Byung-Jun Park (1)
Hyun-Woo Lee (1)
Ji-Won Choi (1)
Jin-Sang Kim (1)
Y. Ermakov (1)
Seok-Jin Yoon (1)
Young-Jei Oh (1)
Won-Kook Choi (1) wkchoi@kist.re.kr

关键词：ZnO thin film ; low ; energy ion beam ; α ; Al2O3(0001) ; Al−N ; photoluminescence

刊名：Metals and Materials International

出版时间：July 2004

出版年：2004

6.Room-temperature 1.5鈥?.6 碌m photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature

作者：A. A. Tonkikh (12) alex234@newmail.ru
G. E. Tsyrlin (12)
V. G. Talalaev (23)
B. V. Novikov (3)
V. A. Egorov (12)
N. K. Polyakov (12)
Yu. B. Samsonenko (12)
V. M. Ustinov (1)
N. D. Zakharov (4)
P. Werner (4)

刊名：Semiconductors

出版时间：December 2003

出版年：2003

7.Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures

作者：B. N. Romanyuk (1) romb@isp.kiev.ua
V. P. Melnik (1)
V. G. Popov (1)
I. M. Khatsevich (1)
A. S. Oberemok (1)

刊名：Semiconductors

出版时间：April 2010

出版年：2010

8.Low-temperature formation of nanocrystalline SiC particles and composite from three-layer Si/C/Si film for the novel enhanced white photoluminescence

作者：C. K. Chung (1) ckchung@mail.ncku.edu.tw
T. Y. Chen (1)
C. W. Lai (1)

关键词：nc ; SiC – ; Nanoparticles – ; Composite – ; RTA – ; Photoluminescence – ; Nanolayers

刊名：Journal of Nanoparticle Research

出版时间：October 2011

出版年：2011

9.Photoluminescence from germanium quantum wells and quantum dots in silicon grown by MBE at low temperature

作者：T. M. Burbaev (1)
V. A. Kurbatov (1) kurbatov@mail.lebedev.ru
A. O. Pogosov (1)
M. M. Rzaev (1)
N. N. Sibel鈥檇in (1)

刊名：Semiconductors

出版时间：February 2003

出版年：2003

10.Low temperature growth and dimension- dependent photoluminescence efficiency of semiconductor nanowires

作者：Y.-J. Hsu and S.-Y. Lu

刊名：Applied Physics A ; Materials Science & Processing

出版时间：August 2005

出版年：2005

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