ChemInform Abstract: Direct Gap Semiconductors Pb₂BiS₂I₃, Sn₂BiS₂I₃, and Sn₂BiSI₅.

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• 作者：Saiful M. Islam ; Christos D. Malliakas ; Debajit Sarma ; David C. Maloney ; Constantinos C. Stoumpos ; Oleg Y. Kontsevoi ; Arthur J. Freeman and Mercouri G. Kanatzidis
• 刊名：ChemInform
• 出版年：2016
• 出版时间：December, 2016
• 年：2016
• 卷：47
• 期：52
• 全文大小：27K
• ISSN：1522-2667

文摘

Pb₂BiS₂I₃ (I), Sn₂BiS₂I₃ (II), and Sn₂BiSI₅ (III) are prepared by solid state reaction of stoichiometric amounts of PbS and BiI₃ for (I) (silica tube, 500 °C, 72 h; ≈90% yield) and from a 2:1:2:3.15 molar mixture of Sn, Bi, S, and I₂ for mainly (II) and minor amounts of (III) (evacuated silica tubes, 500 °C, 24 h).