Hybridization-Induced Carrier Localization at the C60/ZnO Interface

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• 作者：Leah L. Kelly ; David A. Racke ; Hyungchul Kim ; Paul Ndione ; Ajaya K. Sigdel ; Joseph J. Berry ; Samuel Graham ; Dennis Nordlund and Oliver L. A. Monti
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：May 25, 2016
• 年：2016
• 卷：28
• 期：20
• 页码：3960-3965
• 全文大小：1084K
• ISSN：1521-4095

文摘

Electronic coupling and ground-state charge transfer at the C₆₀/ZnO hybrid interface is shown to localize carriers in the C₆₀ phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C₆₀ and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.