All-solution-printed oxide thin-film transistors by direct thermal nanoimprinting for use in active-matrix arrays

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• 作者：Daisuke Hirose ; Hiroaki Koyama ; Kazuhiro Fukada ; Yoshitaka Murakami ; Keisuke Satou ; Satoshi Inoue and Tatsuya Shimoda
• 刊名：physica status solidi (a)
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：214
• 期：1
• 全文大小：4273K
• ISSN：1862-6319

文摘

All-solution-printed oxide thin-film transistors (TFTs) were fabricated using a direct thermal nanoimprinting technique termed nanorheology printing (n-RP). n-RP is a printing technology that utilizes the thermoplastic properties of oxide gels. We prepared such thermoplastic oxide gels and developed a suitable alignment system. Using this system, TFTs designed for use in active-matrix arrays were fabricated with a high alignment accuracy of less than 5 µm. We succeeded in incorporating these TFTs into all-solution-printed oxide TFT arrays, and the operation of the transistors in the arrays was confirmed.