Band alignment and defect states in amorphous GaInZnO thin films grown on SiO₂/Si substrates

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• 作者：Sung Heo ; JaeGwan Chung ; Jae Cheol Lee ; Taewon Song ; Seong Heon Kim ; Dong-Jin Yun ; Hyung Ik Lee ; KiHong Kim ; Gyeong Su Park ; Jong Soo Oh ; Dong Wook Kwak ; DongWha Lee ; Hoon Young Cho ; Dahlang Tahi ; Hee Jae Kang and Byoung-Deog Choi
• 刊名：Surface and Interface Analysis
• 出版年：2016
• 出版时间：October 2016
• 年：2016
• 卷：48
• 期：10
• 页码：1062-1065
• 全文大小：444K
• ISSN：1096-9918

文摘

The band alignment and defect states of GaInZnO thin films grown on SiO₂/Si via radio frequency (RF) magnetron sputtering were investigated by using X-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo-electron emission and photo-induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo-induced current transient spectroscopy and thermally stimulated exo-electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field-effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect. Copyright