A new nanoscale dual channel Trench (DCT) MOSFET is proposed on SOI.

A 60 nm DCT-MOSFET provides 92% higher drain current as compared to the conventional MOSFET.

DCT-MOSFET achieves twofold increase in peak transconductance, 67% rise in transconductance-to-drain current ratio.

DCT-MOSFET shows 1.9 times improvement in cut-off frequency and 2.1 times higher maximum oscillation frequency.