Advanced technology steps in the fabrication of GaAs microstrip detectors

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• 作者：D. Albertz ; W. Braunschweig ; W. Karpinski ; R. Krais ; Th. Kubicki ; K. Lü ; belsmeyer ; C. Rente ; O. Syben ; F. Tenbusch ; M. Toporowski ; B. Wittmer ; W.J. Xiao
• 刊名：Nuclear Physics B - Proceedings Supplements
• 出版年：1998
• 出版时间：February 1998
• 年：1998
• 卷：61
• 期：3
• 页码：438-441
• 全文大小：261 K

文摘

We report on the fabrication of GaAs microstrip detectors with integrated coupling capacitors and biasing resistors. The characteristics of the dielectrica SiO₂ and Si₃N₄ are compared. The SiO₂ layers were fabricated by evaporation. The Si₃N₄ layers were grown by plasma enhanced vapour deposition. The IV-properties and the yield of the devices is investigated. First results of ion implanted back side contacts without an annealing step are presented.