Indium sulfide thin films as window layer in chemically deposited solar cells

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• 作者：S. Lugo-Loredo ; Y. Pe帽a-M茅ndez ; M. Calixto-Rodriguez ; S. Messina-Fern谩ndez ; A. Alvarez-Gallegos ; A. V谩zquez-Dimas ; T. Hern谩ndez-Garc铆a
• 关键词：Indium sulfide ; Chemical bath deposition ; Thin films ; Solar cells
• 刊名：Thin Solid Films
• 出版年：1 January, 2014
• 年：2014
• 卷：550
• 期：Complete
• 页码：110-113
• 全文大小：876 K

文摘

Indium sulfide (In₂S₃) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO₃)₃ as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is 尾-In₂S₃. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In₂S₃ thin films are photosensitive with an electrical conductivity value in the range of 10^鈭?#xA0;3-10^鈭?#xA0;7 (惟 cm)^鈭?#xA0;1, depending on the film preparation conditions. We have demonstrated that the In₂S₃ thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO₂:F/In₂S₃/Sb₂S₃/PbS/C-Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm².