The band gap energy of the Se-rich ZnO_xSe_1−x depending on composition as well as pressure

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• 作者：Chuan-Zhen Zhao^a ; ^{as3262001@aliyun.com" class="auth_mail" title="E-mail the corresponding author} ; Tong Wei^b ; Xiao-Dong Sun^a ; Sha-Sha Wang^a ; Ke-Qing Lu^a
• 关键词：ZnOSe ; Band gap energy ; Composition dependence ; Pressure dependence
• 刊名：Physica B: Physics of Condensed Matter
• 出版年：2016
• 出版时间：1 December 2016
• 年：2016
• 卷：502
• 期：Complete
• 页码：21-24
• 全文大小：477 K

文摘

A model is developed to describe the band gap energy of the Se-rich ZnO_xSe_1−x with O content no more than 0.12. It is found that the band gap reduction is mainly due to the decline of the Г conduction band minimum (CBM) of ZnO_xSe_1−x. As the coupling interaction between the O level and the CBM of ZnSe is not large, the band E₊$E_{+}$ is hard to be observed. In addition, ZnO_xSe_1−x needs larger pressure than ZnSe to realize the transformation from the direct band gap to the indirect band gap. It is mainly due to the coupling interaction between the O level and the Γ CBM of ZnSe.