A model for the spectral blueshift caused by the In-N clusters in In_xGa_1?xN_yAs_1?y (x<0.4 and y¡Ü0.04) after annealing

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• 作者：Chuan-Zhen Zhao^a ; ^{as3262001@yahoo.com.cn} ; Na-Na Li^b ; Tong Wei^c ; Sha-Sha Wang^a ; Ke-Qing Lu^a
• 关键词：InGaNAs ; Band-anticrossing model ; Blueshift ; Annealing
• 刊名：Physica B
• 出版年：2013
• 出版时间：1 July, 2013
• 年：2013
• 卷：420
• 期：Complete
• 页码：24-27
• 全文大小：360 K

文摘

A model describing the spectral blueshift of the quaternary alloy In_xGa_1?xN_yAs_1?y (x<0.4 and y¡Ü0.04) caused by the In-N clusters after annealing is developed by modifying the band-anticrossing (BAC) model. In the modified BAC model, we consider the effect of the added In-N clusters after annealing on the parameters in the band anticrossing model. It is found that the variation of the N level can be considered to be proportional to the variation of the average number of the nearest-neighbor In atoms per N atom, and the variation of the coupling interaction between the N level and the ¦£ conduction band is determined by the added In-N bonds and the In content. The obtained results are in agreement well with the experimental data. It is very helpful to explain the essence of the blueshift caused by annealing.