Double light emitting diodes were fabricated by introducing an In0.17Al0.83N interlayer in n-ZnO/p-GaN heterojunction.
•
The reverse leakage current was reduced by introducing the In0.17Al0.83N interlayer.
•
The electroluminescence spectra of the n-ZnO/In0.17Al0.83N/p-GaN heterojunctions were dominated by p-GaN emissions under forward biases and n-ZnO emissions under reverse biases.
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via email.