Synthesis of hexagonal boron nitride with the presence of representative metals

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• 作者：Erhan Budak ; Ç ; etin Bozkurt
• 关键词：Hexagonal boron nitride ; Nanocrystals ; O’ ; Connor method ; Characterization
• 刊名：Physica B
• 出版年：2010
• 出版时间：15 November 2010
• 年：2010
• 卷：405
• 期：22
• 页码：4702-4705
• 全文大小：679 K

文摘

Hexagonal boron nitride (h-BN) samples were prepared using the modified O’Connor method with KNO₃ and Ca(NO₃)₂ at different temperatures (1050, 1250, and 1450 °C). The samples were characterized by FTIR, XRD, and SEM techniques. Usage of representative metals exhibited a positive effect on the crystallization of h-BN and they caused the formation of nano-scale products at relatively low temperature. XRD results indicated that there was an increase in interlayer spacing due to the d–π interaction. The calculated lattice constants were very close to the reported value for h-BN.