Physical, thermal and ablative performance of CVI densified urethane-mimetic SiC preforms containing in situ grown Si3N4 whiskers
文摘

A two-step process for making preform and SiC/Si3N4/SiC ceramics.

One-step pyrolysis and siliconization treatment at 1600 °C/4 h.

SiC/Si3N4 preform containing in situ grown Si3N4 whiskers.

Isotropic physical and thermal properties contrary to bio-mimetic ceramics.

Densification using chemical vapor infiltration for higher densities.

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