Effects of the Cu/(Ga+In) ratio on the bulk and interface properties of Cu(InGa)(SSe)<sub>2</sub> solar cells

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Effects of the Cu/(Ga+In) ratio on the bulk and interface properties of Cu(InGa)(SSe)₂ solar cells

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作者：Dongho Lee^a ; JungYup Yang^b ; Young-Su Kim^a ; Chan B. Mo^a ; Sungchan Park^a ; ByoungJune Kim^a ; Dongseop Kim^a ; Junggyu Nam^a ; ^{zignamu@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Yoonmook Kang^c ; ^{ddang@korea.ac.kr" class="auth_mail" title="E-mail the corresponding author}
关键词：AS ; admittance spectroscopy ; CIGSe ; copper indium gallium diselenide ; CGI ; Cu/(In+Ga) ratio ; CV ; capacitance&ndash ; voltage ; DLCP ; drive-level capacitance profiling ; Eg ; bandgap ; FF ; fill factor ; JSC ; short-circuit current density ; TCO ; transparent conducting oxide ; VOC ; open-circuit voltage
刊名：Solar Energy Materials and Solar Cells
出版年：2016
出版时间：May 2016
年：2016
卷：149
期：Complete
页码：195-203
全文大小：2121 K

文摘

•: Explain the effect of CGI ratio in CIGSSe fabricated by heat treatment of precursor.
•: The characterization of junction properties via electrical measurement.
•: Short carrier diffusion length at high CGI samples due to the poor crystal quality.
•: Fabrication of 16% high efficiency CIGSSe module based on the optimum CGI ratio.

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