On the beneficial effect of Al<sub>2</sub>O<sub>3</sub> front contact passivation in Cu(In,Ga)Se<sub>2</sub> solar cells

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On the beneficial effect of Al₂O₃ front contact passivation in Cu(In,Ga)Se₂ solar cells

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作者：Jan Keller^a ; ^{Jan.Keller@angstrom.uu.se" class="auth_mail" title="E-mail the corresponding author} ; Fredrik Gustavsson^a ; Lars Stolt^a ; ^b ; Marika Edoff^a ; Tobias Tö ; rndahl^a
关键词：CIGSe ; Al2O3 ; Surface passivation ; Atomic layer deposition ; ALD
刊名：Solar Energy Materials and Solar Cells
出版年：2017
出版时间：January 2017
年：2017
卷：159
期：Complete
页码：189-196
全文大小：2893 K

文摘

•: An Al₂O₃ front contact passivation layer is introduced to Cu(In, Ga)Se₂ solar cells.
•: The ALD Al₂O₃ is thin enough to allow for tunneling.
•: Detrimental effect of openings in buffer layer is mitigated by passivation.
•: CIGSe/Al₂O₃ interface exhibits lower defect density compared to CIGSe/ZnO interface.
•: Heat treatment during Al₂O₃ deposition induces a larger space charge region width.

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