Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

详细信息    查看全文

• 作者：J.A. Budagosky^a ; N. Garro^a ; ^{nuria.garro@uv.es" class="auth_mail" title="E-mail the corresponding author} ; A. Cros^a ; A. Garcí ; a-Cristó ; bal^a ; S. Founta^b ; B. Daudin^b
• 关键词：Non-polar quantum dots ; Photoluminescence ; Electronic structure ; Stark effect ; Stacking faults
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：15 November 2016
• 年：2016
• 卷：55
• 期：Complete
• 页码：90-94
• 全文大小：589 K

文摘

The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30% reduction of the internal electric field and gives a better account of the observed optical features.