Molecular dynamics simulation of the interfacial thermal resistance between phosphorene and silicon substrate

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Molecular dynamics simulation of the interfacial thermal resistance between phosphorene and silicon substrate

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作者：Jingchao Zhang^a ; Yang Hong^b ; Mengqi Liu^c ; Yanan Yue^d ; Qingang Xiong^e ; ^{qgxiong@126.com" class="auth_mail" title="E-mail the corresponding author} ; Giulio Lorenzini^f ; ^{giulio.lorenzini@unipr.it" class="auth_mail" title="E-mail the corresponding author}
关键词：Phosphorene ; Interfacial thermal resistance ; Molecular dynamics simulation ; Graphene ; Silicene
刊名：International Journal of Heat and Mass Transfer
出版年：2017
出版时间：January 2017
年：2017
卷：104
期：Complete
页码：871-877
全文大小：1902 K

文摘

class="label">•: Interfacial thermal resistance (R) of phosphorene/silicon was modeled by MD.
class="label">•: Interaction among phosphorene atoms was modeled by the Stillinger–Weber potential.
class="label">•: R of phosphorene/silicon decreases with system temperature and coupling strength.
class="label">•: R of phosphorene/silicon is about a quarter of that of graphene/silicon.
class="label">•: R for phosphorene is more sensitive to external variations than that for silicene.

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