The analytic model for the BODS (Buried Oxide Double Step Silicon On Insulator) structure is achieved.

The breakdown voltage enhancement of the BODS with about 30% higher than conventional SOI LDMOS is observed in both analytical and simulation results.

The electric field modulation effect is explained through the analytical model.

The fully depletion criterion and the RESURF criterion for the BODS structure is achieved.

The different breakdown conditions at the junctions in the device are analyzed.