GSMBE growth of GaInAsP/InP 1.3????m-TM-lasers for monolithic integration with optical waveguide isolator

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• 作者：Lelarge ; F. ; Dagens ; B. ; Cuisin ; C. ; Le Gouezigou ; O. ; Patriarche ; G. ; Van Parys ; W. ; Vanwolleghem ; M. ; et. al.
• 刊名：Journal of Crystal Growth
• 出版年：2005
• 出版时间：May 1, 2005
• 年：2005
• 卷：278
• 期：1-4
• 页码：709-713
• 全文大小：298 K

文摘

The GSMBE growth of GaInAsP/InP 1.3-μm-TM active core and highly p-doped contacting layers required for fabricating an integrated optical waveguide isolator is studied in detail. The deposition of a highly doped 1.17-μm-GaInAsP:Be contacting layers provide a good electrical contact between the III–V semiconductor and the ferromagnetic metal is reported. The GSMBE growth of strain-compensated GaInAsP multiple-quantum wells (QWs) allows one to stack up to fifteen 12-nm-thick −1.1 % tensile-strained QWs. Broad area TM-lasers with threshold a current density of 0.8k A/cm² and characteristic temperature of 75 K (in the range of 20–80 °C) are obtained for 600 μm-long lasers comprising 6 QWs. The possible wavelength extension of TM lasers to 1.55-μm is also discussed.