The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for high luminosity collider experiments.

The collaboration investigates defect, material and detector characterization, the development of new structures and full detector systems.

Results of measured data of n-in-p type sensors allow recommendations for silicon tracking detectors at the HL-LHC.

The charge multiplication effect was investigated to allow its exploitation and resulted in new structures like LGAD sensors.

New sensor types like slim and active edge sensors, 3D detectors, and lately HVCMOS devices were developed in the active collaboration.