Radio-photoluminescence observed in non-doped Mg₂SiO₄ single crystal

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• 作者：Go Okada^a ; ^{go-okada@ms.naist.jp} ; Takahiro Kojima^b ; Jisaburo Ushizawa^b ; Noriaki Kawaguchi^a ; Takayuki Yanagida^a
• 关键词：Mg2SiO4 ; X-rays ; Radio-luminescence ; TSL ; RPL
• 刊名：Current Applied Physics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：17
• 期：3
• 页码：422-426
• 全文大小：1441 K
• 卷排序：17

文摘

Non-doped Mg2SiO4 single crystal was grown by the Czochralski process. Non-doped Mg2SiO4 single crystal shows RL, TSL, and RPL. RPL emission is observed around 630 nm while exciting at 270 nm. Build-up effect of RPL is observed by annealing below 260 °C. RPL can be completely erased by annealing ∼600 °C.