Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxy

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• 作者：M.P. Semtsiv ; A. Aleks ; rova ; M. Elagin ; G. Monastyrskyi ; J.-F. Kischkat ; Y.V. Flores ; W.T. Masselink
• 关键词：A3. Molecular-beam epitaxy ; B2. Semiconducting III&ndash ; V materials ; B3. Heterojunction semiconductor devices ; B3. Infrared devices
• 刊名：Journal of Crystal Growth
• 出版年：2013
• 出版时间：1 September, 2013
• 年：2013
• 卷：378
• 期：Complete
• 页码：125-128
• 全文大小：608 K

文摘

We describe the realization of buried-heterostructure strain-compensated quantum-cascade lasers that incorporate a very high degree of internal strain and are grown on InP substrates using gas-source molecular-beam epitaxy (GSMBE). The active region of the lasers contains AlAs layers up to 1.6 nm thick with 3.7 % tensile strain; restricting any post-growth processing to temperatures below 600 ¡ãC to avoid relaxation. We demonstrate that buried-heterostructure devices can be realized by using GSMBE to over-grow the etched laser ridge with insulating InP:Fe at temperatures low enough to preserve the crystal quality of the strain-compensated active region. Two distinct growth techniques are described, both leading to successful device realization: selective regrowth at 550 ¡ãC and non-selective regrowth at 470 ¡ãC. The resulting buried-heterostructure lasers are compared to a reference laser from the same wafer, but with SiO₂ insulation; all three have very similar threshold current densities, operational thermal stability, and waveguide losses.