Metal-insulator transitions in (V<sub>1-x</sub>Cr<sub>x</sub>)<sub>2</sub>O<sub>3</sub> thin films deposited by reactive direct current magnetron co-sputtering

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Metal-insulator transitions in (V_1-xCr_x)₂O₃ thin films deposited by reactive direct current magnetron co-sputtering

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作者：Madec Querré ; ^a ; ^b ; ^{madec.querre@cnrs-imn.fr" class="auth_mail" title="E-mail the corresponding author} ; Etienne Janod^a ; Laurent Cario^a ; Julien Tranchant^a ; Benoit Corraze^a ; Valé ; rie Bouquet^b ; Sté ; phanie Deputier^b ; Sté ; phane Cordier^b ; Maryline Guilloux-Viry^b ; Marie-Paule Besland^a ; ^{marie-paule.besland@cnrs-imn.fr" class="auth_mail" title="E-mail the corresponding author}
关键词：V2O3 ; Thin film ; Sputtering ; Mott insulator
刊名：Thin Solid Films
出版年：2016
出版时间：30 October 2016
年：2016
卷：617
期：part_PB
页码：56-62
全文大小：1200 K

文摘

•: (V_1‑xCr_x)₂O₃ thin films (0 ≤ x ≤ 0 .60) deposited by reactive DC magnetron co-sputtering
•: Investigation of V and Cr single target mode versus co-sputtering mode
•: Effect of DC power of Cr target on composition and morphology of thin films
•: Effect of Cr content x on cell parameters of (V_1‑xCr_x)₂O₃ thin films
•: Effect of Cr content x on electrical properties of (V_1‑xCr_x)₂O₃ thin films

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