Growth of aluminum nitride on flat and patterned Si (111) by high temperature halide CVD

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• 作者：Mikhail Chubarov^a ; ^{mihails.cubarovs@simap.grenoble-inp.fr} ; Frederic Mercier^a ; Sabine Lay^a ; Frederic Charlot^b ; Alexandre Crisci^a ; Sté ; phane Coindeau^a ; ^b ; Thierry Encinas^b ; Gabriel Ferro^c ; Roman Reboud^a ; Rapha&euml ; l Boichot^a ; ^{raphael.boichot@simap.grenoble-inp.fr}
• 关键词：Aluminum nitride ; Halide chemical vapor deposition ; Epitaxial lateral overgrowth ; Silicon substrate ; Pillar patterned substrate ; High growth rate ; Process parameters influence
• 刊名：Thin Solid Films
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：623
• 期：Complete
• 页码：65-71
• 全文大小：1089 K
• 卷排序：623

文摘

SiC buffer layer is necessary to suppress disorientation of AlN on Si substrate. AlN grown on pillar-patterned Si substrate has lower stress. Overgrown AlN exhibit lower dislocation density. Coalesced AlN layer on patterned substrate has lower crack density.