Two-zone SiGe base heterojunction bipolar charge plasma transistor for next generation analog and RF applications

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• 作者：Lokesh Kumar Bramhane ; ^{lokesh.bramhane@iiitdmj.ac.in} ; Jawar Singh ^{jawar@iiitdmj.ac.in}
• 关键词：Two-zone SiGe base ; Heterojunction ; Charge plasma ; Work function ; Self gain ; Cut-off frequency ; Operating range
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：200-208
• 全文大小：1173 K
• 卷排序：101

文摘

In this paper, a symmetric lateral two-zone SiGe base heterojunction bipolar charge plasma transistor (HBCPT) with an extruded (extended) base is proposed and its performance at circuit level is studied. The linearly graded electric field in the proposed HBCPT provides improved self gain (β) and cut-off frequency (fT). The proposed HBCPT demonstrates high self gain β 35–172.93 and fT of 1–4 THz for different device parameters. Moreover, fT of 1104.9 GHz and β of 35 can be achieved by decreasing Nb up to 8.2 × 1017cm−3. The small-signal analysis of common-emitter amplifier based on the proposed HBCPT demonstrates high voltage gain of 50.11 as compared to conventional HBT (18.1).