Growth of high quality N-polar n-GaN on vicinal C-face n-SiC substrates for vertical conducting devices
详细信息    查看全文
文摘
listitem" id="list_ulist0010">
•

The full width at half maximum of N-polar GaNlineImage" height="17" width="40" alt="View the MathML source" title="View the MathML source" src="/sd/grey_pxl.gif" data-inlimgeid="1-s2.0-S0042207X16301361-si1.gif">ω-rocking curve is ∼335 arcsec.

•

SiNx interlayer is an effective way to improve the properties of N-polar GaN films.

•

Our structure is vertical conducting.

NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via email.