Terahertz imaging using strained-Si MODFETs as sensors

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• 作者：Y.M. Meziani^a ; E. Garcì ; a-Garcì ; a^a ; ¹ ; J.E. Velá ; zquez-Pé ; rez^a ; ^js@usal.es ; D. Coquillat^b ; N. Dyakonova^b ; W. Knap^b ; I. Grigelionis^c ; K. Fobelets^d
• 关键词：Terahertz ; SiGe ; MODFET ; Imaging ; Sensors
• 刊名：Solid-State Electronics
• 出版年：2013
• 出版时间：May, 2013
• 年：2013
• 卷：83
• 期：Complete
• 页码：113-117
• 全文大小：780 K

文摘

We report on non-resonant (broadband) and resonant detection of terahertz radiation using strained-Si modulation doped field effect transistors. The devices were excited at room temperature by two types of terahertz sources (an electronic source based on frequency multipliers at 0.292 THz and a pulsed parametric laser at 1.5 THz). In both cases, a non-resonant response with maxima around the threshold voltage was observed. Shubnikov-de Haas and photoresponse measurements were performed simultaneously and showed a phase-shift of ¦Ð/2 in good agreement with the theory, which demonstrates that the observed response is related to the plasma waves oscillation in the channel. The non-resonant features were used to demonstrate the capabilities of such devices in terahertz imaging. We also cooled our device down to 4.2 K to increase the quality factor and resonant detection was observed by using a tunable source of terahertz radiation.