General method of synthesis ultrathin ternary metal chalcogenide nanowires for potential thermoelectric applications
文摘
A general method for synthesis of ternary metal chalcogenide nanowires was proposed. Ultrathin nanowires (<20 nm) were achieved, which are the thinnest so far. Thermoelectric figure of merit as high as 0.75 was obtained by solution-based approach. Energy barrier between nanowire-nanowire heterogeneous junctions was confirmed. Guidelines for improving further thermoelectric were suggested.
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