The electrical properties of bulk GaN crystals grown by HVPE

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The electrical properties of bulk GaN crystals grown by HVPE

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作者：Hong Gu^a ; Guoqiang Ren^a ; Taofei Zhou^a ; Feifei Tian^a ; Yu Xu^a ; Yumin Zhang^a ; Mingyue Wang^a ; Jianfeng Wang^a ; ^b ; Ke Xu^a ; ^b ; ^{kxu2006@sinano.ac.cn" class="auth_mail" title="E-mail the corresponding author}
关键词：A2. Growth from vapor ; A2. Single-crystal growth ; A3. Hydride vapor phase epitaxy ; B2. Semiconducting III&ndash ; V materials
刊名：Journal of Crystal Growth
出版年：2016
出版时间：15 February 2016
年：2016
卷：436
期：Complete
页码：76-81
全文大小：1699 K

文摘

•: The samples investigated in this work are sliced from the same bulk crystal.
•: The dislocation density of samples ranges from 2.4×10⁶ cm⁻² to 2.3×10⁵ cm⁻².
•: The evolution of dislocation and impurity with thickness is presented.
•: The mechanism determining the electrical properties of bulk GaN is discussed.
•: HVPE is identified as an effective approach in growing thick bulk GaN.

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