Quality-enhanced GaN epitaxial films grown on (La, Sr) (Al, Ta)O<sub>3</sub> substrates by pulsed laser deposition

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Quality-enhanced GaN epitaxial films grown on (La, Sr) (Al, Ta)O₃ substrates by pulsed laser deposition

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作者：Wenliang Wang^a ; Weijia Yang^a ; Guoqiang Li^a ; ^b ; ^{msgli@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author}
关键词：Epitaxial growth ; Thin films ; X-ray technique ; Morphology ; Structural ; Hetero-interface.
刊名：Materials Letters
出版年：2016
出版时间：1 April 2016
年：2016
卷：168
期：Complete
页码：52-55
全文大小：1434 K

文摘

•: High-quality GaN films have been epitaxially grown on LSAT substrates by PLD.
•: Effect of temperature on the property of GaN films grown by PLD is studied in detail.
•: Abrupt and sharp GaN/LSAT interfaces achieved in this work are of great importance.

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