Study of optical properties of bulk GaN crystals grown by HVPE

网站地图 | English | 公务邮箱

About the library

Background
History
Leadership
Organization

Opening Hours
Collections
Help Via Email

Electronic Information Resources

Study of optical properties of bulk GaN crystals grown by HVPE

详细信息查看全文

作者：Hong Gu^a ; Guoqiang Ren^a ; Taofei Zhou^a ; Feifei Tian^a ; Yu Xu^a ; Yumin Zhang^a ; Mingyue Wang^a ; Zhiqiang Zhang^a ; Demin Cai^b ; Jianfeng Wang^a ; ^b ; Ke Xu^a ; ^b ; ^{kxu2006@sinano.ac.cn" class="auth_mail" title="E-mail the corresponding author}
关键词：GaN ; Hydride vapor phase epitaxy ; Yellow luminescence band ; Dislocation
刊名：Journal of Alloys and Compounds
出版年：2016
出版时间：25 July 2016
年：2016
卷：674
期：Complete
页码：218-222
全文大小：1337 K

文摘

•: The investigated samples were sliced from the same bulk crystal.
•: No correlation between the O or C impurities and the weak YL band is observed.
•: A well-regulated relationship between the YL band and the dislocations is found.
•: A competition between the TES-Si lines and the YL band is discussed.
•: The dislocations trapping Si impurity is suggested to be responsible for YL band.

NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via email.