A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition

网站地图 | English | 公务邮箱

About the library

Background
History
Leadership
Organization

Opening Hours
Collections
Help Via Email

Electronic Information Resources

A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition

详细信息查看全文

作者：Wenliang Wang^a ; ^b ; Weijia Yang^a ; ^b ; Haiyan Wang^a ; ^b ; Yunnong Zhu^a ; ^b ; Meijuan Yang^a ; ^b ; Junning Gao^a ; ^b ; ^c ; ^{msjngao@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Guoqiang Li^a ; ^b ; ^c ; ^{msgli@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author}
关键词：c-plane GaN ; a-plane GaN ; c-plane sapphire ; r-plane sapphire ; X-ray rocking curve
刊名：Vacuum
出版年：2016
出版时间：June 2016
年：2016
卷：128
期：Complete
页码：158-165
全文大小：2060 K

文摘

•: The c-plane and a-plane GaN epitaxial films have been grown on sapphire substrates by pulsed laser deposition.
•: The properties of c-plane and a-plane GaN epitaxial films are studied comparatively.
•: The further insight of c-plane and a-plane GaN epitaxial films grown on sapphire substrates is well analyzed.

NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via email.