Effect of growth temperature on the properties of GaN epitaxial films grown on magnesium aluminate scandium oxide substrates by pulsed laser deposition

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Effect of growth temperature on the properties of GaN epitaxial films grown on magnesium aluminate scandium oxide substrates by pulsed laser deposition

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作者：Wenliang Wang^a ; ^c ; Tao Yan^b ; Weijia Yang^a ; ^c ; Haiyan Wang^a ; ^c ; Yunnong Zhu^a ; ^c ; Yuan Li^a ; ^c ; Xiaochan Li^a ; ^c ; Yulin Zheng^a ; ^c ; Guoqiang Li^a ; ^c ; ^d ; ^{msgli@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Ning Ye^b ; ^{nye@fjirsm.ac.cn" class="auth_mail" title="E-mail the corresponding author}
关键词：Epitaxial growth ; Thin films ; Morphology ; X-ray technique ; Hetero-interface
刊名：Materials Letters
出版年：2016
出版时间：15 November 2016
年：2016
卷：183
期：Complete
页码：382-385
全文大小：1116 K

文摘

•: High-quality GaN epitaxial films have been grown on ScMgAlO₄ substrates by PLD.
•: Effect of growth temperature on the properties of GaN is carefully studied.
•: Sharp and abrupt GaN/ScMgAlO₄ hetero-interfaces have been obtained at low temperature of 450 °C.