Capacitive inertial sensing at high temperatures of up to 400 ce:hsp>°C
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Capacitive inertial sensing has been demonstrated at temperatures of up to 400 °C.

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A static model of the silicon capacitive accelerometer has been developed.

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Static sensor drift is ascribed to changes in the Young's modulus of the Si spring.

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Dynamic sensor drift is ascribed to changes in gas properties in the cavity.

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