Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO<sub>2</sub>/Pt memory device

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Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO₂/Pt memory device

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作者：Lei Zhang ; Haiyang Xu ; ^{hyxu@nenu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Zhongqiang Wang ; ^{wangzq752@nenu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Hao Yu ; Jiangang Ma ; Yichun Liu
关键词：Resistive random access memory (RRAM) ; Bipolar and unipolar resistive switching (BRS and URS) ; Composition of conducting filaments
刊名：Applied Surface Science
出版年：2016
出版时间：1 January 2016
年：2016
卷：360
期：part_PA
页码：338-341
全文大小：1047 K

文摘

•: The coexistence of bipolar and unipolar resistive-switching (BRS and URS).
•: Increasing compliance current can realize the transformation from BRS to URS.
•: The CFs are composed of Ag atoms and Cu vacancies for BRS and URS, respectively.
•: The ZnS-Ag layer plays an important role in the RS localization.
•: The RS is located in the CuAlO₂ layer, realizing the uniform BRS and URS.

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