Efficiency enhancement of Cu₂ZnSn(S,Se)₄ solar cells by S-modified surface layer

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• 作者：Chung-Hao Cai ; Shih-Yuan Wei ; Wei-Chih Huang ; Chia-Hao Hsu ; Wei-Hao Ho ; Chih-Huang Lai ; ^{chlai@mx.nthu.edu.tw}
• 关键词：CZTSSe ; Surface sulfurization ; Surface passivation ; Interface recombination ; Surface bandgap ; S/(S+Se) grading
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2017
• 出版时间：April 2017
• 年：2017
• 卷：162
• 期：Complete
• 页码：21-29
• 全文大小：1507 K
• 卷排序：162

文摘

We fabricated the Cu2ZnSn(S,Se)4 (CZTSSe) absorber with S-modified surface. The effects of surface sulfurization on CZTSSe were thoroughly investigated. Enlarged surface bandgap and reduced interface recombination enhance the Voc. Surface localized electric properties are improved due to surface passivation. The efficiency of CZTSSe device increases from 5.01% (without) to 7.38% (with H2S).