NiB deposits on p-silicon using borohydride as a reducing agent

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• 作者：Mondal ; Anup ; Nath ; Sabyashachi ; Mondal ; Ashok ; Bandopadhyay ; Sikha ; Gangopadhyay ; Utpal ; Saha ; Hiranmay
• 关键词：A. Metals ; A. Electronic materials ; B. Chemical synthesis ; D. Electrical properties
• 刊名：Materials Research Bulletin
• 出版年：2004
• 出版时间：December 2, 2004
• 年：2004
• 卷：39
• 期：14-15
• 页码：2187-2192
• 全文大小：104 K

文摘

A solution, with various deposition parameters optimized to deposit electroless NiB films on p-silicon, has been developed, using sodium borohydride as the reducing agent. This has been done with a view to replace the existing silver–aluminum back contact for crystalline silicon solar cells with NiB films. The deposition has been studied by varying the temperature, time of deposition and the concentration of the reducing agent used, keeping the pH of the solution unchanged. Sheet resistance of the deposited films were measured to confirm the growth. Preliminary studies on contact resistance between NiB film and p-Si have been carried out.