Fabrication and photoelectrochemical properties of silicon nanowires/g-C₃N₄ core/shell arrays

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• 作者：Zhen Chen^a ; ^c ; Ge Ma^a ; Zhihong Chen^b ; ^{chenzhihong1227@sina.com} ; Yongguang Zhang^d ; Zhe Zhang^a ; Jinwei Gao^c ; Qingguo Meng^b ; Mingzhe Yuan^b ; Xin Wang^a ; ^{wangxin@scnu.edu.cn} ; Jun-ming Liu^c ; Guofu Zhou^a
• 关键词：PEC ; Silicon nanowire/g-C3N4 core/shell arrays ; Water splitting
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：28 February 2017
• 年：2017
• 卷：396
• 期：Complete
• 页码：609-615
• 全文大小：2228 K
• 卷排序：396

文摘

A novel Silicon Nanowires/g-C3N4 core/shell arrays photoanode prepared by a mild and inexpensive metal-catalyzed electroless etching (MCEE) process followed by liquid atomic layer deposition (LALD), wiich is a facile and low-cost method. In comparison with FTO/g-C3N4 and Si NWs samples, the Si NWs/g-C3N4 samples showed significantly enhanced photocurrent which could be attributed to the SiNWs-based core/shell structure. A systematical PEC mechanism of the Si NWs/g-C3N4 was proposed is this manuscript.