Analog/RF performance of four different Tunneling FETs with the recessed channels

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• 作者：Wei Li ; Hongxia Liu ; ^{hxliu@mail.xidian.edu.com} ; Shulong Wang ; ^{slwang@xidian.edu.cn} ; Shupeng Chen
• 关键词：Tunneling field effect transistor (TFET) ; Gate capacitance ; Cut-off frequency ; Gain bandwidth product
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：100
• 期：Complete
• 页码：1238-1248
• 全文大小：5982 K
• 卷排序：100

文摘

Analog/RF performance of different TFETs with the recessed channels is studied. The DUTFET has the maximum transconductance. The LTFET has the minimum gate-to-drain capacitance. The LTFET and DUTFET have better analog and RF performance.