Total Ionizing Dose, Random Dopant Fluctuations, and its combined effect in the 45 nm PDSOI node

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• 作者：Eleni Chatzikyriakou ; ^{ec3g12@soton.ac.uk} ; William Redman-White ; C.H. De Groot
• 关键词：Simulation ; Finite Elements Method ; Total Ionizing Dose ; Partially Depleted ; Silicon-on-Insulator ; Random Dopant Fluctuations
• 刊名：Microelectronics Reliability
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：68
• 期：Complete
• 页码：21-29
• 全文大小：2711 K
• 卷排序：68

文摘

Total Ionizing Dose simulations on the PDSOI nMOSFET 45 nm node Simulation of the combined effect of oxide trapped charge and interface traps at the Si/STI and Si/BOX interfaces Examination of the combined effects of Total Ionizing Dose and Random Dopant Fluctuations RDFs reduce radiation hardness of sub-50 nm PDSOI nMOSFETs Increased variation in subthreshold response observed at the onset of parasitic channel inversion