Photoluminescence properties of polycrystalline AgGaTe₂

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• 作者：J. Krustok ; A. Jagomä ; gi ; M. Grossberg ; J. Raudoja and M. Danilson
• 关键词：AgGaTe₂ ; Photoluminescence ; Heavily doped semiconductors ; Deep levels ; Defects
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2006
• 出版时间：15 August 2006
• 年：2006
• 卷：90
• 期：13
• 页码：1973-1982
• 全文大小：213 K

文摘

Due to its high absorption coefficient and close to optimal bandgap energy, AgGaTe₂ is a promising material for solar energy conversion. In order to avoid recombination losses, the study of the defect structure of solar cell materials is very important. This paper reports the results of photoluminescence experiments on polycrystalline AgGaTe₂. Two emission regions centred at 1.32 and 0.8 eV were found. The first region appears near the bandgap energy and comprises three bands that are identified by the theory of heavily doped semiconductors as the band-to-band (1.337 eV), the band-to-tail (1.317 eV) and the band-to-impurity (1.287 eV) recombination. The second deep PL region consists of two bands with the peak energies of 0.835 and 0.75 eV. Both these deep bands have rather low thermal activation energy; 18.5 and 20.8 meV, respectively. The possible origins of these bands are discussed.