A solution approach to p-type Cu₂FeSnS₄ thin-films and pn-junction solar cells: Role of electron selective materials on their performance

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• 作者：Soumyo Chatterjee ; Amlan J. Pal ; ^{sspajp@iacs.res.in}
• 关键词：Cu2FeSnS4 (CFTS) thin-films ; pn-junctions formed through SILAR method ; Solar cell characteristics ; Band-diagram from scanning tunneling spectroscopy ; Junction properties and device resistances
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：160
• 期：Complete
• 页码：233-240
• 全文大小：824 K
• 卷排序：160

文摘

SILAR films of p-type Cu2FeSnS4 (CFTS) introduced in pn-junction solar cells. A range of chalcogenides used as n-type compound semiconductors. Both components of the junctions were SILAR films formed under atmospheric condition. Band-edges of the semiconductors were located from density of states (DOS). Type-II band-alignment of the pn-junctions and energy conversion efficiency of the solar cells were correlated.