High performance Ge ultra-shallow junctions fabricated by a novel formation technique featuring spin-on dopant and laser annealing for sub-10 nm technology applications

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• 作者：Junkang Li^a ; Ran Cheng^a ; Chang Liu^a ; ^c ; Pengzhan Zhang^c ; Jiwu Lu^a ; Kunji Chen^c ; Rui Zhang^a ; Yi Zhao^a ; ^b ; ^{yizhao@zju.edu.cn}
• 关键词：Laser annealing ; Spin-on dopant ; Germanium ; Junction
• 刊名：Microelectronic Engineering
• 出版年：2017
• 出版时间：25 January 2017
• 年：2017
• 卷：168
• 期：Complete
• 页码：1-4
• 全文大小：404 K
• 卷排序：168

文摘

A novel technique for the formation of ultra-shallow Ge junctions using the spin-on dopant and laser annealing is proposed. The ultra-shallow junction depth, high surface doping concentration and steep doping profiles are achieved by this technique. The junctions fabricated by this technique exhibit suppressed leakage current and raised on/off ratio.