Ga19(C(SiMe3)3)6 as a precursor for pure and silicon-doped gallium clusters: a mass spectrometric study of a Ga13
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文摘
The metalloid cluster [Ga19(C(SiMe3)3)6][Li2Br(THF)6] was studied by Fourier-transform ion cyclotron resonance-mass spectrometry (FT/ICR-MS). The spectrum obtained by laser desorption ionization (LDI) is dominated by pure gallium cluster anions Gan with n ranging up to 50 and mixed gallium–silicon cluster anions GanSi, GanSi2, and GanSi3 with n ranging up to 43. A maximum of the cluster abundance is observed for Ga13 and Ga12Si. These experimental results exhibit for the first time the formation of large pure and silicon-doped gallium clusters starting from a molecular compound. They are discussed in terms of the precursor’s structure and the simplified predictions of the jellium model. DFT calculations were employed to further evaluate the electronic properties of these anionic clusters, the results of which show that Ga13 favors a regular bicapped pentagonal prism (D5h) as well as Ga12Si, Si being located in the center of the cluster.
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