Measurement of the drift velocities of electrons and holes in high-ohmic silicon

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Measurement of the drift velocities of electrons and holes in high-ohmic silicon

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作者：C. Scharf ; ^{Christian.Scharf@desy.de" class="auth_mail" title="E-mail the corresponding author} ; R. Klanner
关键词：Drift velocity ; Mobility ; 銆?00銆?/span>銆?/mo>100銆?/mo> silicon ; TCT ; Time-of-flight ; Transient simulation
刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
出版年：2015
出版时间：1 November 2015
年：2015
卷：799
期：Complete
页码：81-89
全文大小：1196 K

文摘

Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with 銆?00銆?/span>

銆?/mo>100銆?/mo>

lattice orientation are presented. The measurements cover electric field values between 2.5 and

50 kV / cm

and temperatures between 233 and

333 K

. For both electrons and holes differences of more than 15%

15 %

are found between our 銆?00銆?/span>

銆?/mo>100銆?/mo>

results and the 銆?11銆?/span>

銆?/mo>111銆?/mo>

drift velocities from literature, which are frequently also used for simulating 銆?00銆?/span>

銆?/mo>100銆?/mo>

sensors. For electrons, the 銆?00銆?/span>

銆?/mo>100銆?/mo>

results agree with previous 銆?00銆?/span>

銆?/mo>100銆?/mo>

measurements; however, for holes differences between 5 and 15% are observed for fields above

10 kV / cm

. Combining our results with published data of low-field mobilities, we derive parametrizations of the drift velocities in high-ohmic 銆?00銆?/span>

銆?/mo>100銆?/mo>

silicon for electrons and holes for fields up to

50 kV / cm

, and temperatures between 233 and 333 K. In addition, new parametrizations for the drift velocities of electrons and holes are introduced, which provide somewhat better descriptions of existing data for 銆?11銆?/span>

銆?/mo>111銆?/mo>

silicon than the standard parametrization.