Grain size increase in pentacene thin films prepared in low-pressure gas ambient

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• 作者：Takamichi Yokoyama ; Chang Bum Park ; Kosuke Nagashio ; Koji Kita ; Akira Toriumi
• 关键词：Pentacene ; Crystal growth ; Organic thin film transistor ; Vacuum evaporation
• 刊名：Thin Solid Films
• 出版年：2009
• 出版时间：30 November 2009
• 年：2009
• 卷：518
• 期：2
• 页码：507-509
• 全文大小：547 K

文摘

We studied a mechanism of grain size increase (that is, island density decrease) in pentacene film prepared in hydrogen (H₂) ambient. The island densities of pentacene films prepared in helium and deuterium were lower than those of vacuum-deposited films. This indicates that the decrease in the island density was not due to the chemical interaction between H₂ and pentacene or the substrate surface. Furthermore, the temperature dependence of the island density indicates that there is no difference in the surface diffusion energy in a vacuum and in H₂. We also improved mobility significantly in the pentacene thin film transistor fabricated on film grown in H₂ ambient on a chemically treated substrate.