Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

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• 作者：Maud Nemoz^a ; ^{mn@crhea.cnrs.fr} ; Roy Dagher^a ; Samuel Matta^a ; ^b ; Adrien Michon^a ; Philippe Venné ; guè ; s^a ; Julien Brault^a
• 关键词：B1. Nitrides ; B2. Semiconducting III-V materials ; A3. Molecular beam epitaxy ; A1. X-ray diffraction ; A1. Atomic force microscopy
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 March 2017
• 年：2017
• 卷：461
• 期：Complete
• 页码：10-15
• 全文大小：743 K
• 卷排序：461

文摘

Annealing and structural characterization of AlN epitaxial layers on sapphire. Strong reduction of both edge and mixed threading dislocation densities. Strong impact of the annealing conditions on the surface morphology. Effect of the annealing on the in-plane lattice parameter of the AlN layers.